STAC2932B mosfets equivalent, rf power transistors hf/vhf/uhf n-channel mosfets.
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Gold metallization Excellent thermal stability Common source push-pull configuration POUT = 300 W min. with 20 dB gain @ 175 MHz In complia.
up to 250 MHz.
Figure 1.
Pin connection
1 1 2 2
1. Drain 2. Gate
3
3. Source (Bottom side)
Table 1.
Device summary.
The STAC2932B is a gold metallized N-channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 250 MHz.
Figure 1.
Pin connection
1 1 2 2
1. Drain 2. Gate
3
3. Source (Bottom side)
Table 1.
D.
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